j. cx s.iils.u , li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 irf430-433/irf830-833 mtm/MTP4N45/4n50 n-channel power mosfets, 4.5 a, 450 v/500 v description these devices are n-channel, enhancement mode, power mosfets designed especially for high voltage, high spaed applications, such as off-line switching power supplies, ups, ac and dc motor controls, relay and solenoid drivers. ? vgs rated at 20 v ? silicon gate for fast switching speeds ? idss. vds(on), soa and vqs(ih) specified at elevated temperature ? rugged maximum ratings to-220ab irf430 irf431 irf432 irf433 mtm4n45 mtm4n50 irf830 irf831 irf832 irf833 mtp4n4s mtp4n50 symbol vdss vdgr vgs tj, tslfl tl characteristic drain to source voltage drain to gate voltage rqs = 20 kfl gate to source voltage operating junction and storage temperature maximum lead temperature for soldering purposes, 1/8' from case for 5 s rating irf430/432 irf830/b32 mtm/mtp4n50 500 500 20 -55 to +150 275 rating irf431/433 irf831/833 mtm/mtp4n4s 450 450 20 -55 to +150 275 unit v v v ?c ?c maximum on-state characteristics rds(on) id static drain-to-source on resistance drain current continuous pulsed irf430/431 irf830/831 1.5 4.5 18 irf432/433 irf832/833 2.0 4.0 16 mtm/MTP4N45 mtm/MTP4N45 1.5 4.0 10 n a maximum thermal characteristics rsjc rsja pd thermal resistance, junction to case thermal resistance, junction to ambient total power dissipation at tc - 25c 1.67 60 75 1.67 60 75 1.67 60 75 "c/w c/w w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press, however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf430-433/irf830-833 electrical characteristics (tc = 25c unless otherwise noted) symbol characteristic win max unit test conditions off characteristics v(br)dss bss less drain source breakdown voltage1 irf430/432/830/832 irr31/433/831/833 zero gate voltage drain current gate-body leakage current irf430-433 irf830-833 500 450 250 1000 100 500 v ua m na vgs - 0 v, b = 250 /ua vps = rated vdss, vgs = 0 v vds = 0.8 x rated vdss, vqs-o v, tc=125c vgs - 20 v. vds = 0 v on characteristics vosph) rds(on) ais gate threshold voltage static drain-source on-resistanoe2 irf430/431/830/831 irf432/433/832/833 forward transconductance 2.0 2.s 4.0 1.5 2.0 v n s ftj) b = 250 |ua, vds = vgs vqs =10 v, id = 2.5 a vds = 10 v, id = 2.5 a dynamic characteristics ciss goss giss input capacitance output capacitance reverse transfer capacitance 800 200 60 pf pf pf vds = 25 v, vqs - 0 v f - 1.0 mhz switching characteristics (tc = 25'1c, figures 12. 13) td(on) tr td(oh) t| g symbol turn-on delay time rise time turn-off delay time fall time total gate charge 30 30 55 30 30 ns ns ns ns nc vqd = 225 v, id - 2.5 a vgs= 10 v, rgen = 15 h rgs = 15 fl vgs- 10 v, id = 7.0 a vds = 180 v characteristic typ max unit test conditions source-drain diode characteristics vsd t,, diode forward voltage irf430/431/830/831 irf432/433/832/833 reverse recovery time 600 1.4 1,3 v v ns ls = 4.5 a; vgs - 0 v ls = 4.0 a; vgs - 0 v ls = 4.5 a; dls/dt=- 100 a/jjs notes 1- tj=+a5c to +1eo-c 2. pulso last pulse width < 60 (is. duty cycle < 1 %
mtm/MTP4N45/4n50 electrical characteristics (tc = 25c unless otherwise noted) symbol characteristic mln max unit test conditions off characteristics v(br)dss loss igss drain source breakdown voltage1 mtm/mtp4n50 mtm/MTP4N45 zero gate voltage drain current gate-body leakage current 500 450 0.25 2.5 500 v ma ma na vgs - 0 v, b - 5-0 ma vos = 0.85 x rated vdss, vgs - 0 v vds - 0.85 x rated vqss. vqs^o v. tc=100c vgs = 20 v, vds = 0 v on characteristics vas(ih) rds(on) vds(on) 9ls gate threshold voltage static drain-source on-resistance2 drain-source on-voltage2 forward transconductance 2.0 1.5 2.0 4.5 4.0 1.5 3.0 7,0 6.0 v v n v v v s (u) id "1.0 ma, vds = vgs id =1.0 ma, vds = vgs, tc = 100c ves = 10 v, i0 = 2.0 a vqs -10 v, id = 2,0 v vqs-10 v, id = 4.0 a vgs =10 v, id -4.0 a tc-100?c vds =10 v, id = 2.0 a dynamic characteristics q83 coss qss input capacitance output capacitance reverse transfer capacitance 1200 300 80 pf pf pf vds = 25 v, vgs = 0 v f=1.0 mhz switching characteristics (tc = 25c, figures 12, 13)3 tdton) t, td(oll) tf q9 turn-on delay time rise time turn-off delay time fall time total gate charge 50 100 200 100 60 ns ns ns ns nc vdd = 25 v, id = 2.0 a vgs =10 v, rgen-so ? rgs = 50 s7 vgs -10 v, id = 7.0 a vdd =180 v motes 1. tj-+25'c to +150-c 2. pulse lest pulse width < so ps, duly cycle <1% 3. switching time measurements performed on lem tr-58 test equipment.
|
